Method For Growing Single Crystals From Polycrystalline Precursors (Technology#: 081498-01)

Description:
A method is disclosed for forming a single crystal relaxor based material, including the following steps: providing a seed single crystal plate, providing a first and second polycrystalline structure, bonding the top surface of the seed crystal plate to the outer surface of the first polycrystalline structure, bonding the bottom surface of the seed crystal plate to the outer surface of the second polycrystalline structure, and annealing the bonded structure.
 

Status of Intellectual Property:

This technology is protected under US Patent 6,048,394
 
Patent Information:
For Information, Contact:
Yatin Karpe
Associate Director
Lehigh University
yak206@lehigh.edu
Inventors:
Martin Harmer
Keywords:
© 2017. All Rights Reserved. Powered by Inteum