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Staggered InGaN Quantum Wells for Improved Active Media for Light Emitting Diodes and Lasers (Technology #: 122406-02)
The given technology involves a novel method in achieving high-efficiency Group III-Nitride light emitting diodes and laser diodes emitting in the visible regime (wavelengths between 420-nm and 650-nm) for use in solid state lightings and medical applications. The current state of the art suffers from poor performances due to low optical gain. The...
Published: 10/14/2009
|
Updated: 6/8/2009
|
Inventor(s):
Nelson Tansu
,
Ronald Arif
,
YiK-Khoon Ee
,
Hongping Zhao
Keywords(s):
Biomedical Applications
,
DVD lasers
,
LED's
,
Light Emitting Diodes
Category(s):
Electronics
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