Staggered InGaN Quantum Wells for Improved Active Media for Light Emitting Diodes and Lasers (Technology #: 122406-02)

Description:

The given technology involves a novel method in achieving high-efficiency Group III-Nitride light emitting diodes and laser diodes emitting in the visible regime (wavelengths between 420-nm and 650-nm) for use in solid state lightings and medical applications. The current state of the art suffers from poor performances due to low optical gain. The given technology allows for a high efficiency blue-green-red media, which can be integrated into a single chip for achieving a high-performance solid state lighting. The technology will have the ability to replace bulky and expensive lasers as a highly-efficient laser in the green regime.





APPLICATIONS
  • Medical
  • Solid State Lighting
  • DVD's


STATUS OF INTELLECTUAL PROPERTY

A US utility patent application and patent cooperation treaty (PCT) have both been filed.

Patent Information:
Category(s):
Electronics
For Information, Contact:
Yatin Karpe
Associate Director
Lehigh University
yak206@lehigh.edu
Inventors:
Nelson Tansu
Ronald Arif
Yik-Khoon Ee
Hongping Zhao
Keywords:
Biomedical Applications
DVD lasers
LED's
Light Emitting Diodes
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